1998. 6. 15
1/5
SEMICONDUCTOR
TECHNICAL DATA
KRA221S~KRA226S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
HIGH CURRENT SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Output Current :-800mA.
DIM
MILLIMETERS
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
TYPE NO.
R1(k )
R2(k )
KRA221S
1
1
KRA222S
2.2
2.2
KRA223S
4.7
4.7
KRA224S
10
10
KRA225S
1
10
KRA226S
2.2
10
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA221S 226S
V
O
-50
V
Input Voltage
KRA221S
V
I
-10, 10
V
KRA222S
-12, 10
KRA223S
-20, 10
KRA224S
-30, 10
KRA225S
-10, 5
KRA226S
-12, 6
Output Current
KRA221S 226S
I
O
-800
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
MAXIMUM RATING (Ta=25 )
R1
R2
COMMON(+)
OUT
IN
TYPE
KRA221S
KRA222S
KRA223S
KRA224S
KRA225S
KRA226S
MARK
PQ
PR
PS
PT
PU
PV
MARK SPEC
Type Name
Marking
Lot No.
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